Optical properties of GaAs1- x Nx alloys grown by molecular beam epitaxy

Philosophical Magazine

Volumn 86, Issue 23, 2006, Pages 3477-3486

  Alam, J ^a   Botchkarev, A E ^a   Griffin, J A ^a   Smirnov, N B ^b   Govorkov, A V ^b   Polyakov, A Y ^b   Zavada, J M ^c   Christou, A ^d   Mohammad, S Noor ^d,e  

^a HOWARD UNIVERSITY   (United States)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c U S ARMY RESEARCH OFFICE   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

^e School of Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTOR GROWTH;

NITROGEN CONTENT; OPTICAL EXPOSURE; PHOTOMEMORY EFFECT; PHOTOQUENCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33744982421     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430600625677     Document Type: Article

References (14)

1. A.M. Mintairov, P.A. Blagnov, V.G. Melehin, et al., Phys. Rev. B 56 15 (1997).
2. T. Prokofyeva, T. Sauncy, M. Seon, et al., Appl. Phys. Lett. 73 1409 (1998).
3. G. Pozina, I. Ivanov, B. Monemar, et al., J. Appl. Phys. 84 3830 (1998).
4. J.F. Geisz, D.J. Freidman, J.M. Olson, et al., J. Cryst. Growth 195 401 (1998).
5. X. Li, S. Kim, E.E. Reuter, S.G. Bishop, et al., Appl. Phys. Lett. 72 1990 (1998).
6. A.R. Zanatta, P. Hammer and F. Alvarez, Appl. Phys. Lett. 76 2211 (2000).
7. X. Yang, J.B. Heroux, J.M. Jurkovic, et al., Appl. Phys. Lett. 76 795 (2000).
8. M. Sato, J. Cryst. Growth 145 99 (1994).
9. J. Alam, J.A. Griffin, A.E. Botchkarev, et al., unpublished.
10. D.G. Oates, A.S. Newman, R.G. Wooley, et al., J. Phys. C 19 841 (1986).
11. S. Noor Mohammad, J. Appl. Phys. 95 4856 (2004).
12. S. Noor Mohammad, J. Appl. Phys. 95 7940 (2004).
13. Z.-F. Fan, S.N. Mohammad, W. Kim, et al., Appl. Phys. Lett. 68 1672 (1996).
14. S. Francoeur, S. Sivaraman, Y. Qui, et al., Appl. Phys. Lett. 72 1857 (1998).