Characteristics of metal-silicon carbide tunnel contact

Journal De Physique. IV : JP

Volumn 132, Issue , 2006, Pages 137-139

  Aroutiounian, V M ^a   Buniatyan, V V ^b   Soukiassian, P G ^c   Buniatyan, Vaz V ^b  

^a YEREVAN STATE UNIVERSITY   (Armenia)

^b STATE ENGINEERING UNIVERSITY OF ARMENIA   (Armenia)

^c CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRAPS; SEMICONDUCTOR MATERIALS;

BREAKDOWN AVALANCHE VOLTAGE; METAL-SILICON CARBIDE TUNNEL CONTACT; SEMICONDUCTOR BANDGAP;

SILICON CARBIDE;

EID: 33744937567     PISSN: 11554339     EISSN: 17647177     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2006132027     Document Type: Conference Paper

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