Raman scattering study of a GaAsN epitaxial layer

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 581-584

  Yu, G Y ^a   Shen, Z X ^a   Liu, L ^a   Sun, W X ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

GaAsN; Phonon correlation length; Raman scattering

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL SYMMETRY; EPITAXIAL GROWTH; LATTICE CONSTANTS; NITROGEN; PRESSURE EFFECTS; RAMAN SCATTERING; THERMAL EFFECTS;

EPITAXIAL LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035574258     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00022-7     Document Type: Conference Paper

References (12)