λ∼1.49-3.4 μm intersubband absorptions in (CdS/ZnSe)/BeTe quantum wells grown by molecular beam epitaxy

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Li, B S ^a   Akimoto, R ^a   Akita, K ^a,b   Hasama, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTROMAGNETIC WAVE ABSORPTION; MOLECULAR BEAM EPITAXY; STRAIN;

CARRIER COMPENSATION; INTERSUBBAND TRANSITION (ISBT); MOLECULAR LAYERS (ML);

SEMICONDUCTOR QUANTUM WELLS;

EID: 33744817336     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208963     Document Type: Article

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