Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 498-501

  Bousquet, V ^a   Laugt M ^a   Vennegues P ^a   Tournie E ^a   Faurie, J P ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM COMPOUNDS; COMPUTER SIMULATION; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

EPILAYERS; HIGH-RESOLUTION X RAY DIFFRACTION (HRXRD);

MOLECULAR BEAM EPITAXY;

EID: 0041711647     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01385-2     Document Type: Article

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