Single intrinsic Josephson junction with double-sided fabrication technique

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  You, L X ^a   Torstensson, M ^a   Yurgens, A ^a   Winkler, D ^a   Lin, C T ^b   Liang, B ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; SINGLE CRYSTALS; THIN FILMS;

FABRICATION TECHNIQUE; GAPLIKE FEATURES; INTRINSIC JOSEPHSON JUNCTIONS (IJJ); STACKS;

JOSEPHSON JUNCTION DEVICES;

EID: 33744806632     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2207827     Document Type: Article

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