Atomic-scale sources and mechanism of nanoscale electronic disorder in Bi2Sr2CaCu2O8+δ

Science

Volumn 309, Issue 5737, 2005, Pages 1048-1052

  McElroy, K ^a,b   Lee, Jinho ^a   Slezak, J A ^a   Lee, D H ^b   Eisaki, H ^c   Uchida, S ^d   Davis, J C ^a  

^a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; HIGH TEMPERATURE EFFECTS; IMPURITIES; NANOSTRUCTURED MATERIALS;

DOPANT ATOM DISTRIBUTIONS; ELECTRONIC DISORDERS; QUASI-PARTICLES; SPATIAL DENSITIES;

SUPERCONDUCTING MATERIALS;

BISMUTH DERIVATIVE; CALCIUM DERIVATIVE; COPPER DERIVATIVE; OXYGEN; STRONTIUM;

NANOTECHNOLOGY;

ARTICLE; CHEMICAL MODIFICATION; ELECTRONICS; ENERGY; HIGH TEMPERATURE; MATHEMATICAL MODEL; MOLECULAR DYNAMICS; NANOTECHNOLOGY; PRIORITY JOURNAL; SUPERCONDUCTOR;

EID: 23744498740     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1113095     Document Type: Article

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