Gap-inhomogeneity-induced electronic States in superconducting Bi2Sr2CaCu2O8+Î

Physical Review Letters

Volumn 96, Issue 1, 2006, Pages

  Fang, A C ^a,e   Capriotti, L ^b   Scalapino, D J ^c   Kivelson, S A ^a   Kaneko, N ^d   Greven, M ^a,d   Kapitulnik, A ^a  

^a STANFORD UNIVERSITY   (United States)

^b Credit Suisse group   (Switzerland)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRONS; SCANNING TUNNELING MICROSCOPY; SUPERCONDUCTING MATERIALS;

COHERENCE PEAKS; WAVE GAP AMPLITUDE; WEAK COHERENCE;

BISMUTH COMPOUNDS;

EID: 32644475724     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.017007     Document Type: Article

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