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Volumn 24, Issue 3, 2006, Pages 1556-1558
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Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL STRUCTURE;
EPITAXIAL GROWTH;
LOW TEMPERATURE EFFECTS;
STOICHIOMETRY;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
CLUSTER FORMATION;
LOW-TEMPERATURE GROWN (LTG);
TERAHERTZ APPLICATIONS;
WAFER SHEET RESISTIVITY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 33744804290
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2190677 Document Type: Article |
Times cited : (7)
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References (14)
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