Co salicide technology for sub-0.15 μm FD-SOI and beyond: Super-flat silicide and fully-silicided source/drain structure

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 72-73

  Ichimori, Takashi ^a   Hirashita, Norio ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; ULSI CIRCUITS;

FLOATING BODY EFFECTS;

MOSFET DEVICES;

EID: 0034472124     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)