Computer controlled microwave transient photoconductivity for the nondestructive characterization of GaAs substrates

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 223-227

  Buldygin, S A ^a   Golod, S V ^a   Preobrazhenskii, V V ^a   Semyagin, B P ^a   Skok, E M ^a   Tarlo, D G ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Microwave; Molecular beam epitaxy; Photoconductivity

Indexed keywords

ACTIVATION ENERGY; COMPUTER CONTROL; COMPUTER SIMULATION; LASER PULSES; MICROWAVES; MOLECULAR BEAM EPITAXY; NONDESTRUCTIVE EXAMINATION; PHOTOCONDUCTIVITY; SUBSTRATES; THERMAL EFFECTS;

COMPUTER CONTROLLED MICROWAVE TRANSIENT PHOTOCONDUCTIVITY; HIGH RESISTIVITY WAFER SUBSTRATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0006487380     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01820-X     Document Type: Article

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