Resist deformation at low temperature in nanoimprint lithography

Current Applied Physics

Volumn 6, Issue 3, 2006, Pages 486-490

  Mohamed, K ^a   Alkaisi, M M ^a   Smaill, J ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

Low temperature; Nanoimprint lithography; PMMA; Thickness

Indexed keywords

GLASS TRANSITION; LITHOGRAPHY; LOW TEMPERATURE EFFECTS; PHOTORESISTS; POLYMETHYL METHACRYLATES; THICKNESS MEASUREMENT;

NANOIMPRINT LITHOGRAPHY; PMMA; RESIDUAL RESIST THICKNESS; STRUCTURE PATTERNS;

NANOTECHNOLOGY;

EID: 33744507815     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.11.048     Document Type: Article

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