Charge distribution on and near Schottky nanocontacts

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 33, Issue 1, 2006, Pages 296-302

  Hägglund, Carl ^a   Zhdanov, Vladimir P ^a,b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

Author keywords

Ag; Au; Catalysis; Metal semiconductor interfaces; Nanocontacts; Schottky junctions; Semiconducting surfaces; Si; Surface electronic phenomena; TiO2

Indexed keywords

CATALYSIS; ELECTRIC CHARGE; ELECTRON TUNNELING; FERMI LEVEL; GOLD; PARTICLE SIZE ANALYSIS; PERMITTIVITY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON; SILVER; TITANIUM OXIDES;

CHARGE DISTRIBUTION; DOPANT CONCENTRATION; METAL SEMICONDUCTOR INTERFACES; NEAR SCHOTTKY NANOCONTACTS; SCHOTTKY JUNCTIONS; SEMICONDUCTING SURFACES; SEMICONDUCTOR PERMITTIVITY; SURFACE ELECTRONIC PHENOMENA; TUNNELING BARRIER;

NANOSTRUCTURED MATERIALS;

EID: 33646931524     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.03.152     Document Type: Article

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