Comparison of optical properties in Al- and Cu-BEOL of CMOS image sensor devices

Electrochemical and Solid-State Letters

Volumn 9, Issue 7, 2006, Pages

  Lee, Wan Gyu ^a,b   Kim, J S ^a  

^a MagnaChip Semiconductor Ltd   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; IMAGE SENSORS; OPTICAL PROPERTIES; PERMITTIVITY; PHOTODIODES;

INTERMETAL DIELECTRIC; MICROLENS; OPTICAL CARRIERS; OPTICAL POWER DENSITY;

CMOS INTEGRATED CIRCUITS;

EID: 33646876459     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2200146     Document Type: Article

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