Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Bian, L F ^a   Zhang, C G ^a   Chen, W D ^a   Hsu, C C ^a   Qu, Y H ^a   Jiang, D S ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ERBIUM; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SILICA; SILICON;

EMISSION PROPERTIES; EXCITATION MECHANISM; NANOCLUSTERS; PHOTOLUMINESCENCE (PL) PEAK;

NANOSTRUCTURED MATERIALS;

EID: 33646872869     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191570     Document Type: Article

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