Coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs (001) substrates

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Lee, H S ^a   Sohn, H S ^a   Lee, J Y ^b   Lee, K H ^b   Kim, Y H ^b   Kim, T W ^c   Kwon, M S ^d   Park, H L ^e  

^a Kyungpook National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hanyang University   (South Korea)

^d University of Seoul   (South Korea)

^e Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; ORDER DISORDER TRANSITIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

COEXISTENCE; EPILAYERS GROWTH; HETEROEPITAXIAL LAYERS; ORDERED STRUCTURES;

CADMIUM ALLOYS;

EID: 33646872492     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195020     Document Type: Article

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