Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

Materials Science and Engineering C

Volumn 26, Issue 5-7, 2006, Pages 760-765

  Lin, S W ^a   Song, A M ^a   Missous, M ^a   Hawkins, I D ^a   Hamilton, B ^a   Engstrom O ^a,b   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

DLTS; Electron emission; Indium arsenide; Quantum dot; Trapping; Tunnelling

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; FERMI LEVEL; INDIUM COMPOUNDS; SELF ASSEMBLY;

CARRIER LOSS; INDIUM ARSENIDE; THERMAL EMISSION; TRAPPING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646835731     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.09.100     Document Type: Article

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