Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 4, 1996, Pages 2662-2666

  Zhu, Jian hong ^a   Gong, Da wei ^a   Zhang, Bo ^a   Lu, Fang ^a   Sheng, Chi ^a   Sun, Heng hui ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013270906     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.2662     Document Type: Article

References (10)

1. J. S. Park, R. P. G. Karunasiri, Y. J. Mii and K. L. Wang, Appl. Phys. Lett. 58, 1083 (1991).
2. G. Tempel, N. Schwarz, F. Müller, F. Koch, H. P. Zeindl and I. Eisele, Thin Solid Films 184, 171 (1990).
3. H. P. Zeindl, T. Wegehaupt, I. Eisele, H. Oppolzer, H. Reisinger, G. Temple and F. Koch, Appl. Phys. Lett. 50, 1164 (1987).
4. G. Temple, F. Koch, H. P. Zeindl and I. Eisele, J. Phys. (Paris) 48, 259 (1989).
5. A. A. van Gorkum, K. Nakagawa and Y. Shiraki, Jpn. J. Appl. Phys. 26, L1933 (1987).
6. H.-M. Li, K.-F. Berggren, W.-X. Ni, B. E. Sernelius, M. Willander and G. V. Hansson, J. Appl. Phys. 67, 1962 (1990).
7. J. Zhu, D. Gong, B. Zhang, F. Lu, C. Sheng, H. Sun and X. Wang, Phys. Rev. B 52, 8959 (1995).
8. P. A. Martin, K. Meehan, P. Gavrilovic, K. Hess, N. Holonyak, Jr., and J. J. Coleman, J. Appl. Phys. 54, 4689 (1983).
9. N. Debbar, D. Biswas and P. Bhattacharya, Phys. Rev. B 40, 1058 (1989).
10. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).