Electrical Activation Processes in Ion Implanted SiC Device Structures

AIP Conference Proceedings

Volumn 680, Issue , 2003, Pages 694-696

  Jones, K A ^a   Ervin, M H ^a   Shah, P B ^a   Derenge, M A ^a   Vispute, R D ^b   Venkatesan, T ^b   Freitas, J A ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b University of Maryland   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CHEMICAL ACTIVATION; DEFECTS; INDUSTRIAL RESEARCH; SILICON CARBIDE; SILICON COMPOUNDS;

ANNEALING TEMPERATURES; DISLOCATION LOOP; ELECTRICAL ACTIVATION; EXTENDED DEFECT; IMPLANTED DOPANTS; ION IMPLANTED; MOST LIKELY; SIC DEVICES;

ION IMPLANTATION;

EID: 33646795219     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1619809     Document Type: Conference Paper

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