Electrical and photoelectrical properties of vacuum deposited Se-Te-Pb thin films

Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 2, 2006, Pages 794-799

  Kushwaha, N ^a   Shukla, R K ^a   Kumar, A ^a  

^a HARCOURT BUTLER TECHNOLOGICAL INSTITUTE   (India)

Author keywords

Chalcogenide glasses; Density of defect states; Low temperature conductivity; Mott's parameters; Photoconductivity

Indexed keywords

DECAY (ORGANIC); DEPOSITION; FERMI LEVEL; GLASS; GLASS TRANSITION; LEAD COMPOUNDS; PHOTOCONDUCTIVITY; SELENIUM COMPOUNDS; TELLURIUM COMPOUNDS; TEMPERATURE;

CHALCOGENIDE GLASS; DENSITY OF DEFECTS; LOW-TEMPERATURE CONDUCTIVITY; MOTT'S PARAMETERS; PERSISTENT PHOTOCONDUCTIVITY; PHOTO-ELECTRICAL PROPERTIES; TRANSIENT PHOTOCONDUCTIVITY; VACUUM DEPOSITION TECHNIQUES;

THIN FILMS;

EID: 33646793002     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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