Molecular beam epitaxy growth of exchange-biased PtMnNiFe bilayers with a spontaneously ordered PtMn layer

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Choi, Y S ^a   Petford Long, A K ^a   Ward, R C C ^a   Fan, R ^b   Goff, J P ^b   Hase, T P A ^c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; MAGNETIC DOMAINS; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SENSORS;

ANTIFERROMAGNETIC PINNING LAYER; EXCHANGE ANISOTROPY FIELD; PHASE IDENTIFICATION; SPIN VALVE SENSORS;

PLATINUM COMPOUNDS;

EID: 33646762516     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2189935     Document Type: Article

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