Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Yoshikawa, M ^a   Kitagawa, E ^a   Takahashi, S ^a   Kai, T ^a   Amano, M ^a   Shimomura, N ^a   Kishi, T ^a   Ikegawa, S ^a   Asao, Y ^a   Yoda, H ^a   Nagahara, K ^b   Numata, H ^b   Ishiwata, N ^b   Hada, H ^b   Tahara, S ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIZATION; MAGNETORESISTANCE; OXIDATION; REDUCTION; SWITCHING FUNCTIONS; TUNNEL JUNCTIONS;

MAGNETIZATION REVERSALS; MAGNETORESISTIVE TUNNELING JUNCTIONS (MTJ); MICROMAGNETIC SIMULATION; SWITCHING FIELD DISTRIBUTIONS (SFD);

RANDOM ACCESS STORAGE;

EID: 33646752353     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2165138     Document Type: Article

References (6)

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