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Volumn 99, Issue 8, 2006, Pages
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Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories
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Author keywords
[No Author keywords available]
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Indexed keywords
MAGNETIZATION;
MAGNETORESISTANCE;
OXIDATION;
REDUCTION;
SWITCHING FUNCTIONS;
TUNNEL JUNCTIONS;
MAGNETIZATION REVERSALS;
MAGNETORESISTIVE TUNNELING JUNCTIONS (MTJ);
MICROMAGNETIC SIMULATION;
SWITCHING FIELD DISTRIBUTIONS (SFD);
RANDOM ACCESS STORAGE;
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EID: 33646752353
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2165138 Document Type: Article |
Times cited : (15)
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References (6)
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