Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 758-765

  Umar, A ^a   Im, Y H ^a   Hahn, Y B ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Nanostructures; Photoluminescence (PL); Thermal evaporation process; Transmission electron microscopy (TEM); ZnO

Indexed keywords

GREEN EMISSION; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC ZINC POWDER; PYRAMID SHAPED NANOTOWERS; THERMAL EVAPORATION PROCESS;

MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POWDER METALS; SCANNING ELECTRON MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 33646736364     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0135-8     Document Type: Conference Paper

References (30)

1. Y.R. Ryu, S. Zhu, J.D. Budai, H.R. Chandrasekhar, P.F. Miceli, and H.W. White, J. Appl. Phys. 200, 88 (2001).
2. R.F. Service, Science 276, 895 (1997).
3. M.H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
4. C.H. Liu, J.A. Zapien, Y. Yao, X.M. Meng, C.S. Lee, S.S. Fan, Y. Lifshitz, and S.T. Lee, Adv. Mater. 15, 838 (2003).
5. E.L. Paradis and A.J. Shuskus, Thin Solid Films 83, 131 (1976).
6. T. Nagata, T. Shimura, A. Asida, N. Fujimura, and T. Ito, J. Cryst. Growth 237, 533 (2002).
7. M. Kadota, Jpn. J. Appl. Phys. 36, 3076 (1997).
8. A. Kolmakov, Y. Zhang, G. Cheng, and M. Moskovits, Adv. Mater. 15, 997 (2003).
9. A. Sekar, S.H. Kim, A. Umar, and Y.B. Hahn, J. Cryst. Growth 277, 471 (2005).
10. S.H. Kim, A. Umar, and Y.B. Hahn, Korean J. Chem. Eng. 22, 489 (2005).
11. A. Umar, S.H. Kim, K.S. Nahm, Y.S. Lee, and Y.B. Hahn, J. Cryst. Growth 282, 131 (2005).
12. A. Umar, S. Lee, Y.S. Lee, K.S. Nahm, and Y.B. Hahn, J. Cryst. Growth 277, 479 (2005).
13. B.P. Zhang, N.T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki, and H. Koinuma, Appl. Phys. Lett. 84, 4098 (2004).
14. Z.W. Pan, Z.R. Dai, and Z.L. Wang, Science 291, 1947 (2001).
15. X.Y. Kong and Z.L. Wang, Nano Lett. 3, 1625 (2003).
16. P.X. Gao and Z.L. Wang, Appl. Phys. Lett. 84, 2883 (2004).
17. D. Zhao, Y. Liu, D. Shen, Y. Lu, L. Zhang, and X. Fan, J. Appl. Phys. 94, 5605 (2003).
18. Y. Zhang, H. Jia, R. Wang, C. Chen, X. Luo, D. Yu, and C. Lee, Appl. Phys. Lett. 83, 4631 (2003).
19. H. Yan, R. He, J. Pham, and P. Yang, Adv. Mater. 15, 402 (2003).
20. K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, and J.A. Voigt, J. Appl. Phys. 79, 7983 (1996).
21. D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M.Y. Shen, and T. Goto, Appl. Phys. Lett. 73, 1038 (1998).
22. R.S. Wagner and W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
23. E.I. Givargizov, J. Cryst. Growth 32, 20 (1975).
24. S.S. Brenner and G.W. Sears, Acta Metall. Mater. 4, 268 (1956).
25. L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, Appl. Phys. Lett. 86, 24108 (2005).
26. Q. Wei, G. Meng, X. An, Y. Hao, and L. Zhang, Nanotechnology 16, 2561 (2005).
27. J.F. Conley, Jr., L. Stecker, and Y. Ono, Nanotechnology 16, 292 (2005).
28. X.Q. Meng, D.X. Zhao, J.Y. Zhang, D.Z. Shen, Y.M. Lu, Y.C. Liu, and X.W. Fan, Chem. Phys. Lett. 407, 91 (2005).
29. X. Han, G. Wang, J. Jie, W.C.H. Choy, Y. Luo, T.I. Yuk, and J.G. Hou, J. Phys. Chem. B 109, 2733 (2005).
30. G. Shen and C.-J. Lee, Cryst. Growth Des. 5, 1085 (2005).