Thermal hysteresis in the magnetization of the layered III-VI diluted magnetic semiconductor In 1-x Mn x Se

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Pekarek, T M ^a   Ranger, L H ^a   Miotkowski, I ^b   Ramdas, A K ^b  

^a UNIVERSITY OF NORTH FLORIDA   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

III-VI DILUTED MAGNETIC SEMICONDUCTOR IN 1-X MN X SE; MAGNETIC-FIELD HYSTERESIS; THERMAL HYSTERESIS;

ELECTRIC CHARGE; HYSTERESIS; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MANGANESE COMPOUNDS; THERMAL EFFECTS;

MAGNETIC SEMICONDUCTORS;

EID: 33646719655     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2165924     Document Type: Article

References (25)

1. T. M. Pekarek, M. Duffy, J. Garner, B. C. Crooker, I. Miotkowski, and A. K. Ramdas, J. Appl. Phys. 87, 6448 (2000).
2. C. Fuller, A. Douglas, J. Garner, T. M. Pekarek, I. Miotkowski, and A. K. Ramdas, Phys. Rev. B 65, 195211 (2002).
3. J. L. Tracy, R. Mourad, J. Garner, T. M. Pekarek, I. Miotkowski, and A. K. Ramdas, " Explorations of the magnetization of Ga1-x Mnx S over a wide range of concentrations, 0.008
4. G. Franzese, A. Byrd, J. T. Tracy, J. Garner, T. M. Pekarek, I. Miotkowski, and A. K. Ramdas, J. Appl. Phys. 97, 10D308 (2005).
5. T. M. Pekarek, B. C. Crooker, I. Miotkowski, and A. K. Ramdas, J. Appl. Phys. 83, 6557 (1998).
6. T. M. Pekarek, C. L. Fuller, J. Garner, B. C. Crooker, I. Miotkowski, and A. K. Ramdas, J. Appl. Phys. 89, 7030 (2001).
7. Semiconductors and Semimetals, edited by, J. K. Furdyna, and, J. Kossut, (Academic, Boston, 1988), Vol. 25.
8. T. M. Pekarek, D. J. Arenas, I. Miotkowski, and A. K. Ramdas, J. Appl. Phys. 97, 10M106 (2005).
9. P. Somasundaram, D. Kim, J. M. Honig, T. M. Pekarek, T. Gu, and A. I. Goldman, J. Appl. Phys. 83, 7243 (1998).
10. L. V. Gasparov, K. G. Brown, A. C. Wint, D. B. Tanner, H. Berger, G. Margaritondo, R. Gaal, and L. Forro, Phys. Rev. B 66, 094301 (2002).
11. N. C. Fernelius, Prog. Cryst. Growth Charact. Mater. 28, 275 (1994).
12. A. Segura, J. Bouvier, M. V. András, F. J. Manjón, and V. Muñoz, Phys. Rev. B 56, 4075 (1997).
13. D. R. Suhre, N. B. Singh, V. Balakrishni, N. C. Fernelius, and F. K. Hopkins, Opt. Lett. 22, 775 (1997).
14. S. Meng, B. R. Schroeder, and M. A. Olmstead, Phys. Rev. B 61, 7215 (2000).
15. D. E. N. Brancus and G. Stan, Phys. Rev. B 63, 235203 (2001).
16. M. O. D. Camara, A. Mauger, and I. Devos, Phys. Rev. B 65, 205308 (2002).
17. I. H. Choi and P. Y. Yu, Phys. Rev. B 68, 165339 (2003).
18. G. Ferlat, H. Xu, V. Timoshevskii, and X. Blase, Phys. Rev. B 66, 085210 (2002).
19. S. Nüsse, P. H. Bolivar, H. Kurz, F. Levy, A. Chevy, and O. Lang, Phys. Rev. B 55, 4620 (1997).
20. D. Errandonea, A. Segura, J. F. Sánchez-Royo, V. Muñoz, P. Grima, A. Chevy, and C. Ulrich, Phys. Rev. B 55, 16217 (1997).
21. F. J. Manjon, D. Errandonea, A. Segura, and V. Muñoz, Phys. Rev. B 63, 125330 (2001).
22. J. Z. Wan, J. L. Brebner, and R. Leonelli, Phys. Rev. B 53, 15413 (1996).
23. F. J. Manjón, A. Segura, and V. Muñoz, J. Appl. Phys. 81, 6651 (1997).
24. A. B. M. O. Islam, T. Tambo, and C. Tatsuyama, J. Appl. Phys. 85, 4003 (1999).
25. N. Okamoto, T. Takahashi, and H. Tanaka, Appl. Phys. Lett. 73, 794 (1998).