Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Materials Letters

Volumn 60, Issue 17-18, 2006, Pages 2187-2189

  Zhu, Jingtao ^a,b   Zhao, Li ^a   Li, Wen ^c   Wang, Yu ^d   Feng, Guojin ^d   Wang, Zhanshan ^b  

^a FUDAN UNIVERSITY   (China)

^b TONGJI UNIVERSITY   (China)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^d NATIONAL INSTITUTE OF METROLOGY   (China)

Author keywords

Femtosecond laser pulses; Laser processing; Light absorption; Microstructure; Silicon; Surface

Indexed keywords

IRRADIATION; LASER PULSES; LIGHT POLARIZATION; MICROSTRUCTURE; NITROGEN; SILICON;

FEMTOSECOND LASER PULSES; LASER PROCESSING; SURFACE;

LIGHT ABSORPTION;

EID: 33646598041     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2005.12.095     Document Type: Article

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