Electrical and optical characterisation of TiN porous Si/Si structures

Surface and Interface Analysis

Volumn 38, Issue 4, 2006, Pages 811-814

  Benzekkour, N ^a   Gabouze, N ^a   Sam, S ^a   Saoula, N ^b   Henda, K ^b  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b CENTRE DE DÉVELOPPEMENT DES TECHNOLOGIES AVANCÉES   (Algeria)

Author keywords

(r.f.) pulverisation; Optical and electrical properties; Porous silicon; Silicon; Thin films; TiN films

Indexed keywords

COMMINUTION; ELECTRIC PROPERTIES; MOLECULAR STRUCTURE; POROUS SILICON; REFRACTIVE INDEX; SPECTROPHOTOMETRY; THIN FILMS; TITANIUM NITRIDE;

(R.F.) PULVERISATION; OPTICAL AND ELECTRICAL PROPERTIES; SCHOTTKY LIKE JUNCTIONS; TIN FILMS;

SEMICONDUCTING FILMS;

EID: 33646559588     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2242     Document Type: Conference Paper

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