Room-temperature direct bonding of CMP-Cu film for bumpless interconnection

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2001, Pages 755-760

  Shigetou, A ^a   Hosoda, N ^a   Itoh, T ^a   Suga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CHEMICAL MECHANICAL POLISHING; COPPER; METALLIC FILMS; MICROELECTRONICS; SURFACE PROPERTIES; THERMAL EFFECTS; THERMAL STRESS;

BUMPLESS INTERCONNECTION; DIRECT BONDING; FLEXIBLE SUBSTRATE; SURFACE ACTIVATED BONDING; ULTRA HIGH DENSITY INTERCONNECTION TECHNOLOGY;

ELECTRONICS PACKAGING;

EID: 0034820414     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Super-connect
2. Direct bonding of CMP-Cu for the next generation of packaging
3. Surface activated bonding -an approach to joining at room temperature
4. Surface activated bonding of silicon wafers at room temperature