New 2D fluxgate devices based on the phase modulation of magnetization rotation in AMR films

Sensors and Actuators, A: Physical

Volumn 129, Issue 1-2 SPEC. ISS., 2006, Pages 107-111

  Petrou, J ^a   Dimitropoulos, P D ^b   Hristoforou, E ^a   Neagu, M ^c  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b MEMS Division   (Greece)

^c ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

AMR; Barkhausen jump; Fluxgate; Magnetic sensor; MRAM

Indexed keywords

MAGNETIC ANISOTROPY; MAGNETIC FLUX; MAGNETIZATION; PHASE MODULATION; RESISTORS; SENSORS;

AMR; BARKHAUSEN JUMP; FLUXGATE; MAGNETIC SENSORS; MRAM;

MAGNETIC DEVICES;

EID: 33646484060     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.11.032     Document Type: Article

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