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Volumn 128, Issue 16, 2006, Pages 5371-5374

Role of interstitial voids in oxides on formation and stabilization of reactive radicals: Interstitial HO2 radicals in F2-laser- irradiated amorphous SiO2

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HYDROGEN; LASER BEAM EFFECTS; OXYGEN; PHOTOLYSIS;

EID: 33646459505     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja0571390     Document Type: Article
Times cited : (12)

References (51)
  • 7
    • 0006215269 scopus 로고    scopus 로고
    • Pacchioni, G., Skuja, L., Griscom, D. L., Eds.; NATO Science Series; Kluwer Academic Publishers: Dordrecht, Netherlands
    • 2 and Related Dielectrics: Science and Technology; Pacchioni, G., Skuja, L., Griscom, D. L., Eds.; NATO Science Series; Kluwer Academic Publishers: Dordrecht, Netherlands. 2000; pp 339-370.
    • (2000) 2 and Related Dielectrics: Science and Technology , pp. 339-370
    • Radzig, V.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.