Thermal radiation characteristics of plane-parallel SiC wafer

Chinese Science Bulletin

Volumn 50, Issue 4, 2005, Pages 295-298

  Han, Maohua ^a   Liang, Xingang ^a   Huang, Yong ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Interference; Optical property; SiC; Thermal radiation; Thin film

Indexed keywords

EID: 33646415585     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1360/982004-521     Document Type: Article

References (16)

1. Yang, S. M., Tao, W. Q., Heat Transfer, Beijing: Higher Education Press, 1998, 239-240.
2. Gall, J. L., Oliver, M., Greffet, J. J., Experimental and theoretical study of reflection and coherent thermal emission by a SiC grating supporting a surface-phonon polariton, Phys. Rev. B, 1997, 55: 10105-10114.
3. Greffet, J. J., Carminati, R., Joulain, K. et al., Coherent emission of light by thermal sources, Nature, 2002, 416: 61-64.
4. Carminati, R., Greffet J. J., Near-field effects in spatial coherence of thermal sources, Phys. Rev. Lett., 1999, 82:1660-1663.
5. Shchegrov, A. V., Joulain K., Carminati R. et al., Near-field spectral effects due to electromagnetic surface excitations, Phys. Rev. Lett., 2000, 85: 1548-1551.
6. Marquier, F., Joulain, K., Mulet, J. P. et al., Coherent spontaneous emission of light by thermal sources, Phys. Rev. B, 2004, 69: 155412.
7. Liptuga, A. I., Shishkina, N. B., Thermal radiation of semitransparent plane-parallel objects, Infrared Physics & Technology, 2003, 44:85-89.
8. Guga, K. Y., Kollyukh, A. G., Liptuga, A. I. et al., Features of thermal radiation of plane-parallel semiconductor wafers, Semiconductors, 2004, 38: 524-528.
9. Roe, K. J., Katulka, G., Kolodzey, J. et al., Silicon carbide and silicon carbide germanium heterostructure bipolar transistors, Appl. Phys. Lett., 2001, 78: 2073-2075.
10. Lee, J. W., Lim, K. S., In situ hydrogenation of visible a-SiC:H-based p-i-n type thin-film light-emitting diodes using the photochemical vapour deposition method, Semicond. Sci. Technol., 1996, 11: 597-600.
11. Wuu, D. S., Homg, R. H., Chan, C. C. et al., Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels, Applied Surface Science, 1999, 144-145: 708-712.
12. Sarro, P. M., Deboer, C. R., Korkmaz E. et al., Low-stress PECVD SiC films for IC-compatible microsturctures, Sens. Actuators A, 1998, 67: 175-180.
13. Hu, Z. H., Liao, X. B., Diao, H. W. et al., Impacts of hydrogen dilution on growth and optical properties of a-SiC:H films, Science in China, Series E, 2004, 47 (3): 327-334
14. Zheng, X. H., Qu, B., Wang, Y. T., Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD, Scinece in China Series A-Mathematics Physics Astronomy, 2001, 44(6): 777-782.
15. Fu, Z. P., Yang, B. F., Liu, R. C. et al., New method to grow preferentially-oriented 4H-SiC films on Si substrate, Chinese Science Bulletin, 1999, 44(6): 575-576.
16. Moss, T. S., Optical properties of semi-conductors, London: Butterworths Scientific Publications, 1959, 4-100.