Sapphire-etched vertical-electrode nitride-based semiconductor light-emitting diode (SEVENS LED) fabricated by the wet etching technique

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 5, 2006, Pages 997-1004

  Kim, Seong Jin ^a  

^a Itswell Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION CURRENT; LATERAL-ELECTRODE (LE); SAPPHIRE-ETCHED VERTICAL-ELECTRODE NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE (SEVENS LED);

ELECTRODES; ETCHING; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTOR JUNCTIONS; SURFACE ROUGHNESS;

LIGHT EMITTING DIODES;

EID: 33646412872     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521135     Document Type: Article

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