Modeling and simulation of resistivity of nanometer scale copper

Microelectronics Reliability

Volumn 46, Issue 7, 2006, Pages 1050-1057

  Yarimbiyik, A Emre ^a,b   Schafft, Harry A ^b   Allen, Richard A ^b   Zaghloul, Mona E ^a   Blackburn, David L ^b  

^a The George Washington University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRONS; GRAIN BOUNDARIES; NANOTECHNOLOGY; SCATTERING PARAMETERS;

GRAIN-BOUNDARY EFFECTS; GRAIN-BOUNDARY SCATTERING; SURFACE SCATTERING EFFECTS;

COPPER;

EID: 33646376456     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.09.004     Document Type: Article

References (11)

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11. eff and e in the Sommerfeld equation are constants, the resistivity of Cu is inversely proportional to the average relaxation time. Because the mean free path is equal to the Fermi velocity times the relaxation time, the mean free path is inversely proportional to the resistivity.