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Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 956-959

Majority-carrier mobilities in undoped and n-type doped ZnO epitaxial layers

(5) Makino, T a,b Segawa, Y b Tsukazaki, A c Ohtomo, A c Kawasaki, M c,d

a UNIVERSITY OF HYOGO (Japan)

b INST OF PHYS AND CHEMICAL RESEARCH (Japan)

c TOHOKU UNIVERSITY (Japan)

d NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; IMPURITIES; MOLECULAR BEAM EPITAXY; ZINC OXIDE; CARRIER CONCENTRATION; GALLIUM;

CARRIER MOBILITIES; EPITAXIAL LAYERS; HALL MOBILITY;

CARRIER CONCENTRATION; EPITAXIAL GROWTH;

73.50.DN; 73.61.GA; ELECTRON PROPERTIES; EXPERIMENTAL DATUM; LASER MOLECULAR BEAM EPITAXY; POTENTIAL BARRIERS; SCATTERING MECHANISMS; TEMPERATURE DEPENDENT;

EID: 33646263352 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200564636 Document Type: Conference Paper

Times cited : (12)

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