Quantum dot based photonic devices at 1.3 μm: Direct modulation, mode-locking, SOAs and VCSELs

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 391-394

  Laemmlin, M ^a   Fiol, G ^a   Kuntz, M ^a   Hopfer, F ^a   Mutig, A ^a   Ledentsov, N N ^b   Kovsh, A R ^b   Schubert, C ^c   Jacob, A ^d   Umbach, A ^d   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b NL Nanosemiconductor GmbH   (Germany)

^c FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^d U2T PHOTONICS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; BANDWIDTH; COATINGS; COMPUTER SIMULATION; LASER MODE LOCKING; LASER PULSES; LIGHT AMPLIFIERS; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; MODULATION;

DIRECT MODULATION; FIELD INTENSITY ANTINODES; MODULATION DOPED QD LAYERS; PHOTONIC DEVICES;

SEMICONDUCTOR DEVICES; SATURABLE ABSORBERS;

DIFFERENTIAL EFFICIENCY; DIRECTLY MODULATED LASERS; GAIN CHARACTERISTIC; HIGH-REFLECTIVITY COATINGS; HYBRID MODE-LOCKING; MINIMUM PULSE WIDTHS; PASSIVE MODE-LOCKING; TIME-BANDWIDTH PRODUCTS;

EID: 33646195472     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564142     Document Type: Conference Paper

References (10)

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