Influence of N cluster states on band dispersion in GaInNAs quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 249-253

  Healy, S B ^a   Lindsay, A ^a   O'Reilly, E P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Alloy disorder; Band anticrossing model; GaInNAs; Resonant tunnelling

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; GALLIUM NITRIDE; HYDROSTATIC PRESSURE;

ALLOY DISORDER; BAND-ANTICROSSING MODEL; GAINNAS; RESONANT TUNNELLING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646193984     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.048     Document Type: Article

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