Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 438-441

  Kohda, M ^a   Ohno, Y ^a,b   Matsukura, F ^a,b   Ohno, H ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

(Ga,Mn)As; Esaki diode; Ferromagnetic semiconductor; Spin injection

Indexed keywords

DENSITY (OPTICAL); ELECTROLUMINESCENCE; FARADAY EFFECT; FERROMAGNETIC MATERIALS; LIGHT EMITTING DIODES; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; POLARIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

(GA,MN)AS; ESAKI DIODE; FERROMAGNETIC SEMICONDUCTORS; SPIN INJECTION;

SEMICONDUCTING GALLIUM;

EID: 33646181418     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.085     Document Type: Article

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