Pyroetectric and conduction properties of Z-type calix[4] acid langmuir-blodgett films

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 11, 2005, Pages 1910-1914

  Capan R ^a   Ray, A K ^b   Richardson, T H ^c   Hassan, A K ^d   Davis, F ^e  

^a BALIKESIR UNIVERSITY   (Turkey)

^b QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

^e CRANFIELD UNIVERSITY   (United Kingdom)

Author keywords

Calixarene; Conductivity; LB films; Pyroelectric effect

Indexed keywords

CALIXARENE; LANGMUIR-BLODGETT (LB); PYROELECTRIC EFFECTS; ROOM TEMPERATURE;

ALUMINA; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRODES; MONOLAYERS; PYROELECTRICITY;

LANGMUIR BLODGETT FILMS;

ALUMINUM; BUFFER; CALIXARENE; METAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODE; GENETIC PROCEDURES; MATERIALS TESTING; STATISTICAL MODEL; SURFACE PROPERTY; TEMPERATURE; TIME;

ALUMINUM; BIOSENSING TECHNIQUES; BUFFERS; CALIXARENES; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODES; MATERIALS TESTING; METALS; MODELS, CHEMICAL; MODELS, STATISTICAL; SURFACE PROPERTIES; TEMPERATURE; TIME FACTORS;

EID: 33646149398     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.419     Document Type: Article

References (24)

1. Y. Shirota, J. Mater. Chem. 10, 1 (2000).
2. S. Coe, W. K. Woo, M. Bawendi, and V. Bulovic, Nature 420, 800 (2002).
3. V. Percec, M. Glodde, T. K. Bera, Y. Miura, I. Shiyanovskaya, K. D. Singer, V. S. K. Balagurusamy, P. A. Heiney, I. Schnell, A. Rapp, H. W. Spiess, S. D. Hudson, and H. Duan, Nature 419, 384 (2002).
4. N. V. Lavrik, D. De Rossi, Z. I. Kazantseva, A. V. Nabok, B. A. Nesterenko, S. A. Piletsky, V. I. Kalchenko, A. N. Shivaniuk, and L. N. Markovskiy, Nanotechnology 7, 315 (1996).
5. A. V. Nabok, A. K. Hassan, A. K. Ray, O. Omar, and V. I. Kalchenko, Sens. Actuators B 45, 115 (1997).
6. R. A. Brook, C. M. Dooling, L. T. Jones, and T. H. Richardson, Mater. Sci. Eng. C. 22, 427 (2002).
7. S. Amemiya and Y. Umezawa, J. Syn. Org. Chem. Japan 55, 436 (1997).
8. F. L. Dickert, U. P. A. Baumler, and G. K. Zwissler, Synthetic Metals 61, 47 (1993).
9. R. Çapan, I. Alp, T. H. Richardson, and F. Davis, Mater. Lett. 59, 1945 (2005).
10. T. Richardson, M. B. Greenwood, F. Davis, and C. J. M. Stirling, Langmuir 11, 4623 (1995).
11. C. M. McCartney, T. Richardson, M. A. Pavier, F. Davis, and C. J. M. Stirling, Thin Solid Films 327, 431 (1998).
12. D. Lacey, T. Richardson, F. Davis, and R. Capan, Mater. Sci. Eng. C 8-9, 377 (1999).
13. A. V. Nabok, B. Iwantono, A. K. Hassan, A. K. Ray, and T. Wilkop, Mater. Sci. Eng. C 22, 355 (2002).
14. S. B. Stringfellow, S. Gupta, C. Shaw, J. R. Alcock, and R. W. Whatmore, J. Eur. Ceram. Soc. 22, 573 (2002).
15. M. W. Poulter, T. Richardson, G. G. Roberts, A. Smallridge, and S. G. Davies, Applications of Ferroelectrics. IEEE 7th International Symposium (1990), p. 395.
16. P. Oliviere, J. Yarwood, and T. H. Richardson, Langmuir 19, 63 (2003).
17. N. J. Geddes, J. R. Sambies, W. G. Parker, N. R. Couch, and D. J. Jarvis, J. Phys. D: Appl. Phys. 23, 95 (1990).
18. P. Le Randu, T. P. Nguyen, O. Gaudin, and V. H. Tran. Synthetic Metals 76, 187 (1996).
19. R. D. Gould and T. S. Shafai, Thin Solid Films 373, 89 (2000).
20. R. B. Chaabane, M. Gamoudi, B. Remaki, G. Guillaud, and O. El Beqqali, Thin Solid Films 296, 148 (1997).
21. M. D. Stamate, Appl. Sur. Sci. 205, 353 (2003).
22. De.-Q. Yang, Y. S. Run, F. Wang, and Y. Guo, Thin Solid Films 385, 239 (2001).
23. A. A. Dakhel, Chem. Phys. Lett. 393, 528 (2004).
24. M. Petty, J. Tsibouklis, F. Davis, P. Hodge, M. C. Petty, and W. J. Feast, J. Phys. D: Appl. Phys. 25, 1032 (1992).