Investigation of the electrical properties of the metal-calixarene-semiconductor structures

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 148-151

  Chaabane, R B ^a   Gamoudi, M ^a   Remaki, B ^a   Guillaud, G ^a   El Beqqali, O ^b  

^a UNIVERSITÉ LYON 1   (France)

^b Lyon Medicine University   (France)

Author keywords

Annealing; Electrical properties; Metal calixarene semiconductor structures

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; ION SENSITIVE FIELD EFFECT TRANSISTORS; OLIGOMERS; THIN FILM TRANSISTORS;

CALIXARENES;

MIS DEVICES;

EID: 0031095833     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(96)09344-3     Document Type: Article

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