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Volumn 27, Issue 2, 2006, Pages 345-349

Photoluminescence and application of nonlinear optical property of nc-Si-SiO2 films

Author keywords

Magnetron sputtering; Nanocrystalline silicon; Passive Q switching; Photoluminescence

Indexed keywords

ANNEALING; MAGNETRON SPUTTERING; MAGNETRONS; NANOSTRUCTURED MATERIALS; NONLINEAR OPTICS; Q SWITCHING; SILICA; SILICON; THIN FILMS;

EID: 33646129654     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (11)

References (14)
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  • 3
    • 0029357965 scopus 로고
    • Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure
    • Qin G G, Li A P, Zhang B R, et al. Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure. J Appl Phys, 1995, 78: 2006
    • (1995) J Appl Phys , vol.78 , pp. 2006
    • Qin, G.G.1    Li, A.P.2    Zhang, B.R.3
  • 6
    • 0031208565 scopus 로고    scopus 로고
    • Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film
    • Zhu M, Chen G. Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film. Appl Phys A, 1997, 65: 195
    • (1997) Appl Phys A , vol.65 , pp. 195
    • Zhu, M.1    Chen, G.2
  • 7
    • 0032266474 scopus 로고    scopus 로고
    • Extended quantum confinement/luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle-or nanometer-Ge-particle-embedded silicon oxide films
    • Qin G G. Extended quantum confinement/luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle-or nanometer-Ge-particle-embedded silicon oxide films. Material Research Bulletin, 1998, 33: 1857
    • (1998) Material Research Bulletin , vol.33 , pp. 1857
    • Qin, G.G.1
  • 10
    • 0001316311 scopus 로고    scopus 로고
    • Q switching of a diode-pumped Nd:YAG laser with GaAs
    • Kajava T T, Gaeta A L. Q switching of a diode-pumped Nd:YAG laser with GaAs. Opt Lett, 1996, 21: 1244
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    • Kajava, T.T.1    Gaeta, A.L.2
  • 11
    • 0030110429 scopus 로고    scopus 로고
    • Optical absorption of freestanding porous silicon films
    • Chan M H, So S K, Cheah K W. Optical absorption of freestanding porous silicon films. J Appl Phys, 1996, 79: 3273
    • (1996) J Appl Phys , vol.79 , pp. 3273
    • Chan, M.H.1    So, S.K.2    Cheah, K.W.3
  • 12
    • 0030079805 scopus 로고    scopus 로고
    • Defects and stability of a-Si:H by simulations of photothermal deflection spectroscope
    • Chinese source
    • Zhu Meifang, Luo Guangming. Defects and stability of a-Si:H by simulations of photothermal deflection spectroscope. Acta Electronica Sinica, 1996, 24(2): 119 (in Chinese)
    • (1996) Acta Electronica Sinica , vol.24 , Issue.2 , pp. 119
    • Zhu, M.1    Luo, G.2
  • 13
    • 0034198091 scopus 로고    scopus 로고
    • Study of a passively Q-switched Nd:YAG laser with GaAs
    • Chinese source
    • Li Ping, Wang Qingpu, Gao Da, et al. Study of a passively Q-switched Nd:YAG laser with GaAs. Acta Optica Sinica, 2000, 20(6): 774 (in Chinese)
    • (2000) Acta Optica Sinica , vol.20 , Issue.6 , pp. 774
    • Li, P.1    Wang, Q.2    Gao, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.