Prepapation of CSD-PZT thick films with different methods

Integrated Ferroelectrics

Volumn 41, Issue 1-4, 2001, Pages 175-183

  Lee, Yong Kyun ^a   Kim, Chang Jung ^a   Lee, June Key ^a   Yi, Insook ^a   Chung, Ilsub ^a   Lee, Wanbsf ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Inha University   (South Korea)

Author keywords

Piezoelectric; PZT; Sol gel; Thick

Indexed keywords

1 ,3 PROPANEDIOL; CHEMICAL SOLUTION DEPOSITION; HIGH VISCOSITIES; PIEZOELECTRIC; PROPYLENE GLYCOLS; PZT; PZT FILM; SOL GEL SOLUTIONS; THERMALLY OXIDIZED SILICON; THICK;

ELECTRIC PROPERTIES; SILICON OXIDES; SOL-GEL PROCESS; SOL-GELS; THICK FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 33646052624     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580108012820     Document Type: Article

References (6)

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3. R. Kurchania. Steven J. Milne "characterization of sol-gel Pb(Zr0.53TW.47)O3 films in the thickness range 0.25-10 urn" J. Mater. Res., Vol 14, No. 5, May 1999
4. Y.L. Tu and S.J. Milne,"Processing and characterization of Pb(Zr, Ti)03 films, up to lOum thick produced from a dial- sol-gel route" J. Mater. Sei. 30, 2507 (1995)
5. K. Maki, N. Soyama, S. Mori and K. Ogi,."Evaluation of CSD-PZT thick films with different film density" to be published
6. Keith G. Brooks, Ian Reaney, Radosveta Klissurka, Y. Hwang, L. Bursill, and N. Setter, "Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates" J. Mater. Res., Vol. 9, No. 10, Oct 1994