Protected nanoelectrodes of two different metals with 30 nm gapwidth and access window

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1702-1705

  Kronholz, S ^a   Karthauser S ^a   Meszaros G ^a,b   Wandlowski, Th ^a   van der Hart, A ^a   Waser, R ^a,c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b CHEMICAL RESEARCH CENTER   (Hungary)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Cyclic voltammetry; Electrochemistry; Nanogaps; Protection layer

Indexed keywords

ELECTRON BEAMS; INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PHOTOLITHOGRAPHY; SILICON;

CONTACT PADS; NANOGAPS; PROTECTION LAYER;

ELECTRODES;

EID: 33646035536     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.12.023     Document Type: Article

References (15)

1. Cui X.D., Primak A., Zarate X., Tomfohr J., Sankey O.F., et al. Science 294 (2001) 572
2. Kaun C.C., and Guo H. Nano Lett. 3 (2003) 1521
3. Smit R.H.M., Noat Y., Untiedt C., Lang N.D., van Hemert M., and Ruitenbeek J.M. Nature 419 (2002) 906
4. Li C., He H., and Tao N. Appl. Phys. Lett. 77 (2000) 3995
5. Reichert J., Ochs R., Beckmann D., Weber H., Mayor M., and Löhneysen H.v. Phys. Rev. Lett. 88 (2002) 176804
6. Reed M., Zhou C., Muller C.J., Burgin T.P., and Tour J. Science 278 (1997) 252
7. Xu B., and Tao N.J. Science 301 (2003) 1221
8. Chen J., Reed M., Rawlett A., and Tour J. Science 286 (1999) 1550
9. Weiss P., Bumm L., Dunbar T., Burgin T., Tour J., and Allara D. Ann. N.Y. Acad. Sci. 852 (1998) 145
10. Chen F., Qing Q., Ren L., and Wu Z. Appl. Phys. Lett. 86 (2005) 123105
11. Strachan D., Smith D.E., Kohnston D.J., Park T., et al. Appl. Phys. Lett. 86 (2005) 043109
12. Naitch Y., Tsukagoshi K., Murata K., and Mizutasi W. Surf. Sci. Nanotech. 1 (2003) 41
13. Lüssem B., Karthauser S., and Haselier H. Appl. Surf. Sci. 249 (2005) 197
14. G. Meszaros, S. Kronholz, S. Karthäuser, Th. Wandlowski, in preparation.
15. Dretschkow Th., Lapner D., and Wandlowski Th. J. Electroanal. Chem. 458 (1998) 121