Nano-line width control and standards using Lateral Pattern Definition technique

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1555-1558

  Zaborowski, Michał ^a   Szmigiel, Dariusz ^a   Gotszalk, Teodor ^b   Ivanova, Katerina ^c   Sarov, Yanko ^c   Ivanov, Tzvetan ^c   Volland, Burkhard E ^c   Rangelow, Ivo W ^c   Grabiec, Piotr ^a  

^a Research Group of Integrated Circuits and System Design   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITY OF KASSEL   (Germany)

Author keywords

Lateral Pattern Definition; Nanometrology; Width standards

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTROL SYSTEMS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; STANDARDS; STRENGTH OF MATERIALS;

LATERAL PATTERN DEFINITION; NANOMETROLOGY; WIDTH STANDARDS;

NANOSTRUCTURED MATERIALS;

EID: 33646024025     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.090     Document Type: Article

References (5)

1. Grabiec P., Zaborowski M., Domański K., Gotszalk T., and Rangelow I.W. Microelectron. Eng. 73-74 (2004) 599
2. M. Pueck, N. Launay, N. Arnal, P. Godinat, J.M. Gruffat, SEMCON Japan 2003 MEMS/NEMS Seminar, 03 Dec 2003.
3. Binning G., Quate C.F., and Gerber Ch. Phys. Rev. Lett. 56 (1986) 930
4. Villarrubia J.S., Dixson R., Jones S., Lowney J.R., Postek M.T., Allen R.A., and Cresswell M.W. Metrology, inspection, and process control for microlithography XIII. Proc. SPIE 3677 (1999) 587
5. Xu S., Amro N.A., and Liu G.-Y. Appl. Surf. Sci. 175-6 (2001) 649