-
1
-
-
0031249129
-
"High-speed response of uni-traveling-carrier photodiodes"
-
Oct
-
T. Ishibashi, S. Kodama, N. Shimizu, and T. Furuta, "High-speed response of uni-traveling-carrier photodiodes," Jpn. J. Appl. Phys., vol. 36, no. 10, pp. 6263-6268, Oct. 1997.
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, Issue.10
, pp. 6263-6268
-
-
Ishibashi, T.1
Kodama, S.2
Shimizu, N.3
Furuta, T.4
-
2
-
-
0034196382
-
"InP/InGaAs uni-traveling-carrier photodiodes"
-
Jun
-
T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, and Y. Miyamoto, "InP/InGaAs uni-traveling-carrier photodiodes," IEICE Trans. Electron., vol. E83-C, no. 6, pp. 938-949, Jun. 2000.
-
(2000)
IEICE Trans. Electron.
, vol.E83-C
, Issue.6
, pp. 938-949
-
-
Ishibashi, T.1
Furuta, T.2
Fushimi, H.3
Kodama, S.4
Ito, H.5
Nagatsuma, T.6
Shimizu, N.7
Miyamoto, Y.8
-
3
-
-
11644259362
-
"Improved response of uni-traveling-carrier photodiodes by carrier-injection"
-
Mar
-
N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "Improved response of uni-traveling-carrier photodiodes by carrier-injection," Jpn. J. Appl. Phys., vol. 37, no. 3B, pp. 1424-1426, Mar. 1998.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, Issue.3 B
, pp. 1424-1426
-
-
Shimizu, N.1
Watanabe, N.2
Furuta, T.3
Ishibashi, T.4
-
5
-
-
0031653214
-
"40 Gb/s high sensitivity optical receiver with uni-travelling-carrier photodiode acting as a decision IC driver"
-
Jan
-
Y. Miyamoto, M. Yoneyama, K. Hagimoto, T. Ishibashi, and N. Shimizu, "40 Gb/s high sensitivity optical receiver with uni-travelling-carrier photodiode acting as a decision IC driver," Electron. Lett., vol. 34, no. 2, pp. 214-215, Jan. 1998.
-
(1998)
Electron. Lett.
, vol.34
, Issue.2
, pp. 214-215
-
-
Miyamoto, Y.1
Yoneyama, M.2
Hagimoto, K.3
Ishibashi, T.4
Shimizu, N.5
-
6
-
-
33645804517
-
-
Orlando, FL: Agere Syst. Optoelectronics Guardian Corp., U. P. a. T. Office, Ed
-
E. J. Flynn, L. A. Gruezke, D. V. Lang, B. M. Onat, and P. D. Yoder, Optoelectronic Device Doped to Augment an Optical Power Threshold for Bandwidth Collapse and a Method of Manufacture Therefor, 2001, Orlando, FL: Agere Syst. Optoelectronics Guardian Corp., U. P. a. T. Office, Ed.
-
(2001)
Optoelectronic Device Doped to Augment an Optical Power Threshold for Bandwidth Collapse and a Method of Manufacture Therefor
-
-
Flynn, E.J.1
Gruezke, L.A.2
Lang, D.V.3
Onat, B.M.4
Yoder, P.D.5
-
7
-
-
33645838505
-
"A modified UTC-PD having high speed and efficiency characteristics utilizing a frequency compensation"
-
D.-H. Jun, I.-H. Kang, and J.-I. Song, "A modified UTC-PD having high speed and efficiency characteristics utilizing a frequency compensation," in Proc. Int. Semicond. Device Res. Symp., 2003, pp. 86-87.
-
(2003)
Proc. Int. Semicond. Device Res. Symp.
, pp. 86-87
-
-
Jun, D.-H.1
Kang, I.-H.2
Song, J.-I.3
-
8
-
-
33645838727
-
"Improved efficiency-bandwidth product of modified uni-traveling-carrier photodiode structures utilizing an undoped photo-absorption layer"
-
presented at the Int. Conf. Solid State Devices and Materials, Kobe, Japan
-
D.-H. Jun, J.-H. Jang, I. Adesida, and J.-I. Song, "Improved efficiency-bandwidth product of modified uni-traveling-carrier photodiode structures utilizing an undoped photo-absorption layer," presented at the Int. Conf. Solid State Devices and Materials, Kobe, Japan, 2005.
-
(2005)
-
-
Jun, D.-H.1
Jang, J.-H.2
Adesida, I.3
Song, J.-I.4
-
9
-
-
0036698647
-
"Comparisons between dual-depletion-region and uni-travelling-carrier p-i-n photodetectors"
-
Aug
-
K. J. Williams, "Comparisons between dual-depletion-region and uni-travelling-carrier p-i-n photodetectors," Proc. Inst. Elect. Eng. - Optoelectron., vol. 149, no. 4, pp. 131-137, Aug. 2002.
-
(2002)
Proc. Inst. Elect. Eng. - Optoelectron.
, vol.149
, Issue.4
, pp. 131-137
-
-
Williams, K.J.1
-
10
-
-
0003539448
-
-
New York: Wiley
-
S. Adachi, Physical Properties of III-V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs and InGaAsP. New York: Wiley, 1992.
-
(1992)
Physical Properties of III-V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs and InGaAsP
-
-
Adachi, S.1
-
11
-
-
0000815978
-
"A generalized Ramo-Shockley theorem for classical to quantum transport at arbitrary frequencies"
-
Feb
-
P. D. Yoder, K. Gaertner, and W. Fichtner, "A generalized Ramo-Shockley theorem for classical to quantum transport at arbitrary frequencies," J. Appl. Phys., vol. 79, no. 4, pp. 1951-1957, Feb. 1996.
-
(1996)
J. Appl. Phys.
, vol.79
, Issue.4
, pp. 1951-1957
-
-
Yoder, P.D.1
Gaertner, K.2
Fichtner, W.3
-
12
-
-
36849131315
-
"Currents to conductors induced by a moving point charge"
-
Oct
-
W. Shockley, "Currents to conductors induced by a moving point charge," J. Appl. Phys., vol. 9, no. 10, pp. 635-636, Oct. 1938.
-
(1938)
J. Appl. Phys.
, vol.9
, Issue.10
, pp. 635-636
-
-
Shockley, W.1
-
13
-
-
21544448810
-
"Currents induced by electron motion"
-
Sep
-
S. Ramo, "Currents induced by electron motion," Proc. IRE, vol. 27, pp. 584-585, Sep. 1939.
-
(1939)
Proc. IRE
, vol.27
, pp. 584-585
-
-
Ramo, S.1
-
15
-
-
0027545719
-
"Design of ultrawide-band, high-sensitivity p-i-n photodetectors"
-
Feb
-
K. Kato, S. Hata, K. Kawano, and A. Kozen, "Design of ultrawide-band, high-sensitivity p-i-n photodetectors," IEICE Trans. Electron., vol. E76-C, no. 2, pp. 214-221, Feb. 1993.
-
(1993)
IEICE Trans. Electron.
, vol.E76-C
, Issue.2
, pp. 214-221
-
-
Kato, K.1
Hata, S.2
Kawano, K.3
Kozen, A.4
-
16
-
-
0000563869
-
"Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs"
-
Oct
-
Y.-J. Chiu, S. B. Fleischer, D. Lasaosa, and J. E. Bowers, "Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs," Appl. Phys. Lett., vol. 71, no. 17, pp. 2508-2510, Oct. 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, Issue.17
, pp. 2508-2510
-
-
Chiu, Y.-J.1
Fleischer, S.B.2
Lasaosa, D.3
Bowers, J.E.4
-
17
-
-
0000438343
-
"Electron diffusivity in p-InGaAs determined from the pulse response of InP/InGaAs uni-traveling-carrier photodiodes"
-
Feb
-
N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "Electron diffusivity in p-InGaAs determined from the pulse response of InP/InGaAs uni-traveling-carrier photodiodes," Appl. Phys. Lett., vol. 76, no. 9, pp. 1191-1193, Feb. 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, Issue.9
, pp. 1191-1193
-
-
Shimizu, N.1
Watanabe, N.2
Furuta, T.3
Ishibashi, T.4
-
18
-
-
0033681260
-
"Essential physics of carrier transport in nanoscale MOSFETs"
-
Seattle, WA
-
M. Lundstrom, Z. Ren, and S. Datta, "Essential physics of carrier transport in nanoscale MOSFETs," in Proc. Int. Conf. Simul. Semicond. Processes Devices, Seattle, WA, 2000, pp. 1-5.
-
(2000)
Proc. Int. Conf. Simul. Semicond. Processes Devices
, pp. 1-5
-
-
Lundstrom, M.1
Ren, Z.2
Datta, S.3
-
19
-
-
0033332638
-
"High-efficiency uni-traveling-carrier photodiode with an integrated total-reflection mirror"
-
Washington, DC
-
H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, "High-efficiency uni-traveling-carrier photodiode with an integrated total-reflection mirror," in IEDM Tech. Dig., Washington, DC, 1999, pp. 583-586.
-
(1999)
IEDM Tech. Dig.
, pp. 583-586
-
-
Ito, H.1
Furuta, T.2
Kodama, S.3
Ishibashi, T.4
-
20
-
-
0032666653
-
"Ultrawide-band/high-frequency photodetectors"
-
Jul
-
K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microw. Theory Tech., vol. 47, no. 7, pp. 1265-1281, Jul. 1999.
-
(1999)
IEEE Trans. Microw. Theory Tech.
, vol.47
, Issue.7
, pp. 1265-1281
-
-
Kato, K.1
-
21
-
-
0344890958
-
"Quantum efficiency of InP/InGaAs uni-traveling-carrier photodiodes at 1.55-1.7 μm measured using supercontinuum generation in optical fiber"
-
Apr
-
N. Shimizu, K. Mori, T. Ishibashi, and Y. Yamabayashi, "Quantum efficiency of InP/InGaAs uni-traveling-carrier photodiodes at 1.55-1.7 μm measured using supercontinuum generation in optical fiber," Jpn. J. Appl. Phys., vol. 38, no. 4B, pp. 2573-2576, Apr. 1999.
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, Issue.4 B
, pp. 2573-2576
-
-
Shimizu, N.1
Mori, K.2
Ishibashi, T.3
Yamabayashi, Y.4
-
22
-
-
0034318069
-
"Zero-bias high-speed and high-output-voltage operation of cascade-twin unitravelling-carrier photodiode"
-
Nov
-
H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, "Zero-bias high-speed and high-output-voltage operation of cascade-twin unitravelling-carrier photodiode," Electron. Lett., vol. 36, no. 24, pp. 2034-2036, Nov. 2000.
-
(2000)
Electron. Lett.
, vol.36
, Issue.24
, pp. 2034-2036
-
-
Ito, H.1
Furuta, T.2
Kodama, S.3
Ishibashi, T.4
-
23
-
-
0035689778
-
"Direct opto-electronic synthesis of mW-level millimeter-wave signals using an optical frequency comb generator and a uni-traveling-carrier photodiode"
-
S. Fukushima, C. F. C. Silva, Y. Muramoto, and A. J. Seeds, "Direct opto-electronic synthesis of mW-level millimeter-wave signals using an optical frequency comb generator and a uni-traveling-carrier photodiode," in Proc. IEEE MTT-S, 2001, pp. 69-72.
-
(2001)
Proc. IEEE MTT-S
, pp. 69-72
-
-
Fukushima, S.1
Silva, C.F.C.2
Muramoto, Y.3
Seeds, A.J.4
-
24
-
-
0036705241
-
"High-power photonic microwave generation at K- and Ka-bands using a uni-traveling-carrier photodiode"
-
Aug
-
H. Ito, H. Fushimi, Y. Muramoto, T. Furuta, and T. Ishibashi, "High-power photonic microwave generation at K- and Ka-bands using a uni-traveling-carrier photodiode," J. Lightw. Technol., vol. 20, no. 8, pp. 1500-1505, Aug. 2002.
-
(2002)
J. Lightw. Technol.
, vol.20
, Issue.8
, pp. 1500-1505
-
-
Ito, H.1
Fushimi, H.2
Muramoto, Y.3
Furuta, T.4
Ishibashi, T.5
-
25
-
-
1442287668
-
"High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for > 40-Gb/s optical receivers"
-
Feb
-
M. Achouche, V. Magnin, J. Harari, F. Lelarge, E. Derouin, C. Jany, D. Carpentier, F. Blanche, and D. Decoster, "High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for > 40-Gb/s optical receivers," IEEE Photon. Technol. Lett., vol. 16, no. 2, pp. 584-586, Feb. 2004.
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.2
, pp. 584-586
-
-
Achouche, M.1
Magnin, V.2
Harari, J.3
Lelarge, F.4
Derouin, E.5
Jany, C.6
Carpentier, D.7
Blanche, F.8
Decoster, D.9
-
26
-
-
7544243357
-
"High-saturation current wide-bandwidth photodetectors"
-
Jul./Aug
-
D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, and K. J. Williams, "High-saturation current wide-bandwidth photodetectors," IEEE J. Sel. Topics Quantum Electron., vol. 10, no. 4, pp. 702-708, Jul./Aug. 2004.
-
(2004)
IEEE J. Sel. Topics Quantum Electron.
, vol.10
, Issue.4
, pp. 702-708
-
-
Tulchinsky, D.A.1
Li, X.2
Li, N.3
Demiguel, S.4
Campbell, J.C.5
Williams, K.J.6
-
27
-
-
33645826458
-
"High-power photodetectors"
-
Apr
-
D. A. Tulchinsky, K. J. Williams, X. Li, N. Li, and J. Campbell, "High-power photodetectors," IEEE LEOS Newsl., vol. 19, no. 2, pp. 16-17, Apr. 2005.
-
(2005)
IEEE LEOS Newsl.
, vol.19
, Issue.2
, pp. 16-17
-
-
Tulchinsky, D.A.1
Williams, K.J.2
Li, X.3
Li, N.4
Campbell, J.5
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