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Volumn 23, Issue 2, 2006, Pages 88-98

Reducing burn-in time through high-voltage stress test and weibull statistical analysis

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; INTEGRATED CIRCUIT MANUFACTURE; STATISTICAL METHODS; WEIBULL DISTRIBUTION;

EID: 33645812150     PISSN: 07407475     EISSN: None     Source Type: Journal    
DOI: 10.1109/MDT.2006.50     Document Type: Article
Times cited : (40)

References (14)
  • 2
    • 33645819813 scopus 로고    scopus 로고
    • ASIC Products Application Note SA14-2280-03, rev. 3, Microelectronics Division, IBM
    • Quality and Reliability, ASIC Products Application Note SA14-2280-03, rev. 3, Microelectronics Division, IBM, 1999.
    • (1999) Quality and Reliability
  • 6
    • 33645821666 scopus 로고    scopus 로고
    • "Sector Guide for Implementing High Voltage Stress Test"
    • work instructions, Products Sector, Freescale Semiconductor
    • "Sector Guide for Implementing High Voltage Stress Test," work instructions, Products Sector, Freescale Semiconductor, 2004.
    • (2004)
  • 7
    • 0032320095 scopus 로고    scopus 로고
    • "CMOS IC Reliability Indicators and Burn-in Economics"
    • IEEE CS Press
    • A.W. Righter et al., "CMOS IC Reliability Indicators and Burn-in Economics," Proc. Int'l Test Conf., IEEE CS Press, 1998, pp. 194-293.
    • (1998) Proc. Int'l Test Conf. , pp. 194-293
    • Righter, A.W.1
  • 8
    • 33645818550 scopus 로고    scopus 로고
    • "Freescale Reliability Models"
    • work instructions, Freescale Semiconductor
    • "Freescale Reliability Models," work instructions, Freescale Semiconductor, 2004, pp. 4-9.
    • (2004) , pp. 4-9
  • 11
    • 0038529280 scopus 로고    scopus 로고
    • "Physical and Predictive Models of Ultrathin Oxide Reliability in CMOS Devices and Circuits"
    • Mar
    • J.H. Stathis, "Physical and Predictive Models of Ultrathin Oxide Reliability in CMOS Devices and Circuits," IEEE Trans. Device and Material Reliability, vol. 1, no. 1, Mar. 2001, pp. 43-59.
    • (2001) IEEE Trans. Device and Material Reliability , vol.1 , Issue.1 , pp. 43-59
    • Stathis, J.H.1
  • 12
    • 0033741528 scopus 로고    scopus 로고
    • "Experimental Evidence for Voltage Driven Breakdown Models in Ultrathin Gate Oxides"
    • IEEE Press
    • P.E. Nicollian, W.R. Hunter, and J.C. Hu, "Experimental Evidence for Voltage Driven Breakdown Models in Ultrathin Gate Oxides," Proc. Int'l Reliability Physics Symp., IEEE Press, 2000, pp. 7-15.
    • (2000) Proc. Int'l Reliability Physics Symp. , pp. 7-15
    • Nicollian, P.E.1    Hunter, W.R.2    Hu, J.C.3
  • 13
    • 33847233600 scopus 로고    scopus 로고
    • "Burn-in Duration Determination: Training"
    • Semiconductor Products Sector, Motorola
    • L. Gunderman and N. Arguello, "Burn-in Duration Determination: Training," Semiconductor Products Sector, Motorola, 2001, pp. 21-27.
    • (2001) , pp. 21-27
    • Gunderman, L.1    Arguello, N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.