Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Opto-Electronics Review

Volumn 14, Issue 1, 2006, Pages 33-36

  Zogg, H ^a   Arnold, M ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Infrared sensors; Lead chalcogenides; Molecular beam epitaxy; Resonant cavity; Silicon substrates

Indexed keywords

CAVITY RESONATORS; CHALCOGENIDES; EUROPIUM COMPOUNDS; INFRARED DETECTORS; MIRRORS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTONS; SELENIUM COMPOUNDS; THERMOGRAPHY (IMAGING);

INFRA-RED SENSOR; LEAD CHALCOGENIDES; MULTISPECTRAL INFRARED; QUARTER-WAVELENGTH; RESONANT CAVITY-ENHANCED DETECTORS; SILICON SUBSTRATES; WAVELENGTH SELECTIVITY; WAVELENGTH-SELECTIVE;

LEAD COMPOUNDS;

EID: 33645790266     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-006-0005-1     Document Type: Conference Paper

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