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Volumn 41, Issue 22, 2005, Pages 1208-1210

Statistical BSIM model for MOSFET 1/f noise

Author keywords

[No Author keywords available]

Indexed keywords

BSIM MODEL; CORNER NOISE SIMULATIONS; HARDWARE CORRELATION; MOSFET 1/F NOISE; PROCESS DESIGN KIT;

EID: 33645728267     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052372     Document Type: Article
Times cited : (13)

References (6)
  • 1
    • 0033314081 scopus 로고    scopus 로고
    • Fluctuations of the low-frequency noise of MOS transistors and their modeling in analog and RF-circuits
    • Brederlow, R.: et al. ' Fluctuations of the low-frequency noise of MOS transistors and their modeling in analog and RF-circuits ', IEDM Tech. Dig., 1999, p. 159-162
    • (1999) IEDM Tech. Dig. , pp. 159-162
    • Brederlow, R.1
  • 2
    • 0037560945 scopus 로고    scopus 로고
    • Noise modeling for RF CMOS circuit simulation
    • Scholten, A.J.: et al. ' Noise modeling for RF CMOS circuit simulation ', IEEE Trans. Electron Devices, 2003, 50, p. 618-632
    • (2003) IEEE Trans. Electron Devices , vol.50 , pp. 618-632
    • Scholten, A.J.1
  • 3
    • 0042825747 scopus 로고    scopus 로고
    • Low frequency noise and fluctuations in advanced CMOS devices
    • Ghibaudo, G.: ' Low frequency noise and fluctuations in advanced CMOS devices ', Proc. SPIE, 5113, Noise in Devices and Circuits, Deen, M.J., Çelik-Butler, Z., Levinshtein, M.E. (Eds), (SPIE, Bellingham, WA, 2003), pp. 16-28
    • Proc. SPIE , vol.5113
    • Ghibaudo, G.1
  • 4
    • 0025398785 scopus 로고
    • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
    • Hung, K.K.: et al. ' A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors ', IEEE Trans. Electron Devices, 1990, 37, p. 654-665
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 654-665
    • Hung, K.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.