Analysis of local structures around Ni atoms doped in ZnO-based diluted magnetic semiconductors by fluorescence EXAFS

Chinese Physics Letters

Volumn 23, Issue 4, 2006, Pages 907-910

  Li, Bin Bin ^a   Xiu, Xiang Qian ^a   Zhang, Rong ^a   Tao, Zhi Kuo ^a   Chen, Lin ^a   Xie, Zi Li ^a   Zheng, You Dou ^a   He, Bo ^b  

^a NANJING UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINARY ALLOYS; DILUTED MAGNETIC SEMICONDUCTORS; FLUORESCENCE; II-VI SEMICONDUCTORS; NICKEL; POWDERS; SOL-GEL PROCESS; SOL-GELS; WIDE BAND GAP SEMICONDUCTORS; X RAY ABSORPTION; X RAY POWDER DIFFRACTION; ZINC OXIDE;

EXTENDED X-RAY ABSORPTION FINE STRUCTURE TECHNIQUES; FLUORESCENCE MODE; LOCAL STRUCTURE; NEAR EDGE EXTENDED X-RAY ABSORPTION FINE STRUCTURES; NI ATOMS; SOL- GEL METHODS; ZNO POWDER;

X RAY DIFFRACTION;

EID: 33645541808     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/4/040     Document Type: Article

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