X-ray photoelectron spectroscopy depth profile of chemically modified porous silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 852-854

  Nijdam, A Jasper ^a   Cheng, Mark Ming Cheng ^a   Ferrari, Mauro ^b  

^a OHIO STATE UNIVERSITY   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ETCHING; HEMISPHERICAL ANALYZER; SILICON SURFACES;

CHEMICAL MODIFICATION; ELECTROCHEMISTRY; ETCHING; POLYETHYLENE GLYCOLS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

POROUS SILICON;

EID: 33645533050     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2178373     Document Type: Article

References (16)

1. A. Uhlir, Bell Syst. Tech. J. 35, 333 (1956).
2. T. D. Turner, J. Electrochem. Soc. 105, 402 (1958).
3. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
4. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
5. Properties of porous silicon, edited by, L. T. Canham, (INSPEC, London, 1997).
6. J. M. Buriak, Chem. Rev. (Washington, D.C.) 102, 1271 (2002).
7. J. Drott, K. Lindström, L. Rosengren, and T. Laurell, J. Micromech. Microeng. 7, 14 (1997).
8. T. Laurell, J. Drott, L. Rosengren, and K. Lindström, Sens. Actuators B 31, 161 (1996).
9. A. Janshoff, J. Am. Chem. Soc. 120, 12108 (1998).
10. A. J. Nijdam, Chem. Mater. (submitted).
11. K. C. Popat, S. Sharma, and T. A. Desai, J. Phys. Chem. B 108, 5185 (2004).
12. D. Geho, Chem. Mater. (submitted).
13. R. Terracciano, Proteomics (accepted).
14. M. Gaspari, J. Proteome Res. (accepted).
15. D. H. Geho, N. Lahar, M. Ferrari, E. F. Petricoin, and L. A. Liotta, Biomed. Microdevices 6, 231 (2004).
16. J. Yakovleva, R. Davidsson, A. Lobanova, M. Bengtsson, S. Eremin, T. Laurell, and J. Emneus, Anal. Chem. 74, 2994 (2002).