Structural and electronic properties of neutral and ionic Ga nO n clusters with n = 4-7

Journal of Physical Chemistry A

Volumn 110, Issue 10, 2006, Pages 3814-3819

  Deshpande, Mrinalini ^a,b   Kanhere, D G ^a,c   Pandey, Ravindra ^a  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b H P T Arts and R YK Science College   (India)

^c University ot Pune   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CLUSTERS; ELECTRON AFFINITY; GALLIUM OXIDE; SEQUENTIAL ADDITION;

ADDITION REACTIONS; BINDING ENERGY; CHEMICAL BONDS; ELECTRONIC STRUCTURE; GROUND STATE; IONIZATION; ISOMERS; THREE DIMENSIONAL;

GALLIUM COMPOUNDS;

EID: 33645522600     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0506890     Document Type: Article

References (31)

1. Kumar, V.; Esfarjani, K.; Kawazoe, Y. Clusters and Nanomaterials; Springer Series in Cluster Physics; Springer-Verlag: Berlin, 2002.
2. Clusters and Nanostructured Materials; Jena, P., Behera, S. N., Eds.; Nova Science Publishers: New York, 1996.
3. Jena, P.; Rao, B. K.; Khanna, S. N. Physics and Chemistry of Small Clusters; ATO ASI Series 158; Kluwer: Dordrecht, 1990.
4. Bernstein, E. R., Ed. Atomic and Molecular Clusters; Studies in Physical and Theoretical Chemistry 68; Elsevier: Amsterdam, 1990.
5. Dai, Z. R.; Pan, Z. W.; Wang, Z. L. J. Phys. Chem. B 2000, 106, 902.
6. Zhang, H. C.; Kong, Y. C.; Wang, Y. Z.; Du, Z.; Bai, Z. G.; Wang, J. J.; Yu, D. P.; Ding, Y.; Hang, Q. L.; Feng, S. Q. Solid State Commun. 1999, 109, 677.
7. Chöi, Y. C.; Kim, W. S.; Park, Y. S.; Lee S. M.; Bae, D. J.; Lee, Y. H.; Park, G. S.; Choi, W. B.; Lee, N. S.; Kun, J. M. Adv. Mater. 2000, 12, 746.
8. Park, G. S.; Choi, W. B.; Kim, J. M.; Choi, Y. C.; Lee, Y. H.; Lim, C. B. J. Cryst. Growth 2000, 220, 494.
9. Ogita, M.; Higo, K.; Nakanishi, Y.; Hatanaka, Y. Appl. Surf. Sci. 2001, 120, 455.
10. King, F. L.; Dunlap B. I.; Parent, D. C. J. Chem. Phys. 1991, 94, 2578.
11. Huber, K. P.; Herzberg, G. Constants of Diatomic Molecules; Van Nostrand: New York, 1979.
12. Makowiecki, D. M.; Lynch, D. A.; Carlson, K. D. J. Phys. Chem. 1971, 75, 1963.
13. Hinchcliffe, A. J.; Ogden, J. S. J. Phys. Chem. 1973, 77, 2537.
14. Burkholder, T. R.; Yustein, J. T.; Andrews, L. J. Phys. Chem. 1992, 96, 10189.
15. Archibong, E. F.; Sullivan, R. J. Phys. Chem. 1995, 99, 15830.
16. Archibong, E. F.; St-Amant, A. Chem. Phys. Lett. 1998, 284, 331.
17. Gowtham, S.; Costales, A.; Pandey, R. J. Phys. Chem. B 2004, 108, 17295.
18. Gowtham, S.; Deshpnade, M.; Costales, A.; Pandey, R. J. Phys. Chem. B 2005, 109, 14836.
19. Perdew, J. P.; Wang, Y. J. Chem. Phys. 1992, 45, 13244.
20. Vanderbilt, D. Phys. Rev. B 1990, 41, 7892.
21. Vienna ab initio Simulation Package (VASP), Technische Universität Wien, 1999.
22. Ghanty, T. K.; Davidson, E. R. J. Phys. Chem. A 1999, 103, 2867.
23. Martinez, A.; Tenorio, F.; Ortiz, J. V. J. Phys. Chem. A 2001, 105, 8787.
24. Martinez, A.; Sansores, L. E.; Salcedo, R.; Tenorio, F.; Ortiz, J. V. J. Phys. Chem. A 2002, 106, 10630.
25. Desai, S. R.; Wu, H.; Rohlfing, C. M.; Wang, L. S. J. Chem. Phys. 1997, 106, 1309.
26. Hongbin, W. F.; Li, X.; Wang, X. B.; Ding, C. F.; Wang, L. S. J. Chem. Phys. 1998, 109, 449.
27. Cui, X. Y.; Morrison, I. J. Chem. Phys. 2002, 117, 1077.
28. Chang, Ch.; Patzer, A. B. C.; Sedlmayr, E.; Steinke, T.; Sülzle, D. Chem. Phys. Lett. 2000, 324, 108.
29. Costals, A.; Kandalam, A. K.; Pandey, R. J. Phys. Chem. B 2003, 107, 4508.
30. Geller, S. J. Chem. Phys. 1960, 33, 666.
31. Rienstra-Kiracofe, J. C.; Tschumper, G. S.; Schaefer, H. F., III Chem. Rev. 2002, 102, 231.