High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 762-767

  Bertness, K A ^a   Wang, C M ^a   Salit, M L ^a   Turk, G C ^a   Butler, T A ^a   Paul, A J ^a   Robins, L H ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERTIFICATION; MOLE FRACTION; PLASMA OPTICAL EMISSION SPECTROSCOPY;

COMPOSITION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; PHOTOLUMINESCENCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33645517613     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2181579     Document Type: Article

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